Infineon OptiMOS P Type P-Channel MOSFET, 1.18 A, 20 V Enhancement, 3-Pin SOT-23 BSS215PH6327XTSA1
- RS庫存編號:
- 145-9489
- 製造零件編號:
- BSS215PH6327XTSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
TWD8,400.00
(不含稅)
TWD8,820.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 6,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD2.80 | TWD8,400.00 |
| 15000 + | TWD2.40 | TWD7,200.00 |
* 參考價格
- RS庫存編號:
- 145-9489
- 製造零件編號:
- BSS215PH6327XTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.18A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | OptiMOS P | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Typical Gate Charge Qg @ Vgs | 3.6nC | |
| Forward Voltage Vf | -1.1V | |
| Maximum Power Dissipation Pd | 500mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.3 mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Length | 2.9mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.18A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series OptiMOS P | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Typical Gate Charge Qg @ Vgs 3.6nC | ||
Forward Voltage Vf -1.1V | ||
Maximum Power Dissipation Pd 500mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 1.3 mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Length 2.9mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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