Infineon OptiMOS 3 N-Channel MOSFET, 42 A, 100 V Enhancement, 8-Pin TDSON BSC160N10NS3GATMA1
- RS庫存編號:
- 165-6893
- 製造零件編號:
- BSC160N10NS3GATMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 卷，共 5000 件）*
TWD107,000.00
(不含稅)
TWD112,350.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年10月15日 發貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 5000 - 20000 | TWD21.40 | TWD107,000.00 |
| 25000 + | TWD20.90 | TWD104,500.00 |
* 參考價格
- RS庫存編號:
- 165-6893
- 製造零件編號:
- BSC160N10NS3GATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 42A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TDSON | |
| Series | OptiMOS 3 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 60W | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.35mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Width | 6.35mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 42A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TDSON | ||
Series OptiMOS 3 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 60W | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 5.35mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Width 6.35mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon OptiMOS™ 3 Series MOSFET, 42A Maximum Continuous Drain Current, 60W Maximum Power Dissipation - BSC160N10NS3GATMA1
This MOSFET is engineered for efficiency and durability across a variety of applications. It serves as a fundamental component in power management systems, excelling in switching applications, making it suitable for automation and electrical sectors. Its impressive features, including high continuous drain current and low on-state resistance, optimise performance in various environments, ensuring strength and efficiency.
Features & Benefits
• Supports a continuous drain current of 42A for high-power tasks
• Operates at a maximum drain-source voltage of 100V for broad application use
• Exhibits low on-state resistance of 33mΩ, enhancing energy efficiency
• Designed with a surface mount configuration for simple circuit integration
• Functions in high temperature environments, up to +150°C
• Utilises a single N-channel configuration for improved stability
Applications
• Employed in power supplies and converters for effective energy management
• Suitable for that require Compact and efficient power devices
• Utilised in motor control systems for enhanced response times
• Ideal for telecommunications systems needing robust power capabilities
• Commonly applied in renewable energy systems for efficient power conversion
What are the thermal limits for operating this device?
The device operates within a temperature range of -55°C to +150°C, suitable for various environmental conditions.
How can the low on-state resistance benefit my circuit design?
The low on-state resistance reduces power loss during operation, improving the efficiency of your circuit and decreasing heat generation.
Is there a specific mounting method required for this MOSFET?
This MOSFET features a surface mount design, facilitating straightforward integration into printed circuit boards.
Can this MOSFET be used for pulsed applications?
Yes, it can accommodate pulsed currents of up to 168A, making it apt for applications involving transient loads.
What safety features should I consider during installation?
It is important to manage the gate-source voltage within the specified range of -20V to +20V to prevent damage, while ensuring compliance with thermal resistance ratings for optimal performance.
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