Vishay Single Si7129DN 1 Type P, Type P-Channel MOSFET, 35 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8 SI7129DN-T1-GE3
- RS庫存編號:
- 165-6294
- 製造零件編號:
- SI7129DN-T1-GE3
- 製造商:
- Vishay
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可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD53,400.00
(不含稅)
TWD56,070.00
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD17.80 | TWD53,400.00 |
| 6000 + | TWD17.20 | TWD51,600.00 |
* 參考價格
- RS庫存編號:
- 165-6294
- 製造零件編號:
- SI7129DN-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Transistor Configuration | Single | |
| Series | Si7129DN | |
| Number of Elements per Chip | 1 | |
| Channel Type | Type P, Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 35 A | |
| Maximum Drain Source Voltage (Vds) | 30 V | |
| Channel Mode | Enhancement | |
| Pin Count | 8 | |
| Package Type | PowerPAK 1212-8 | |
| Automotive Standard | No | |
| Forward Voltage (Vf) | 1.2 V | |
| Height | 1.07 mm | |
| Length | 3.15 mm | |
| Maximum Drain Source Resistance (Rds) | 20 mΩ | |
| Maximum Gate Source Voltage (Vgs) | -20 V, +20 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 52.1 W | |
| Minimum Operating Temperature | -50 °C | |
| Mount Type | Surface | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2002/95/EC | |
| Typical Gate Charge (Qg) @ Vgs | 24.6 nC | |
| Width | 3.15 mm | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Transistor Configuration Single | ||
Series Si7129DN | ||
Number of Elements per Chip 1 | ||
Channel Type Type P, Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 35 A | ||
Maximum Drain Source Voltage (Vds) 30 V | ||
Channel Mode Enhancement | ||
Pin Count 8 | ||
Package Type PowerPAK 1212-8 | ||
Automotive Standard No | ||
Forward Voltage (Vf) 1.2 V | ||
Height 1.07 mm | ||
Length 3.15 mm | ||
Maximum Drain Source Resistance (Rds) 20 mΩ | ||
Maximum Gate Source Voltage (Vgs) -20 V, +20 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 52.1 W | ||
Minimum Operating Temperature -50 °C | ||
Mount Type Surface | ||
Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC | ||
Typical Gate Charge (Qg) @ Vgs 24.6 nC | ||
Width 3.15 mm | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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