Microchip DN3135 Type N-Channel MOSFET, 135 mA, 350 V Depletion, 3-Pin SOT-23

RS庫存編號:: 165-5144
製造零件編號:: DN3135K1-G
製造商:: Microchip

Microchip DN3135 Type N-Channel MOSFET, 135 mA, 350 V Depletion, 3-Pin SOT-23

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可享批量折扣

小計（1 卷，共 3000 件）*

TWD52,200.00

(不含稅)

TWD54,810.00

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 9,000 個，準備發貨

單位	每單位	每卷*
3000 - 12000	TWD17.40	TWD52,200.00
15000 +	TWD17.00	TWD51,000.00

* 參考價格

RS庫存編號:: 165-5144
製造零件編號:: DN3135K1-G
製造商:: Microchip

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Microchip
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	135mA
	Maximum Drain Source Voltage Vds	350V
	Package Type	SOT-23
	Series	DN3135
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	35Ω
	Channel Mode	Depletion
	Maximum Gate Source Voltage Vgs	±20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.3W
	Forward Voltage Vf	1.8V
	Maximum Operating Temperature	150°C
	Length	3.04mm
	Width	1.4 mm
	Height	1.02mm
	Standards/Approvals	Lead (Pb)-free/RoHS
	Automotive Standard	No

	選取全部
	品牌 Microchip
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 135mA
	Maximum Drain Source Voltage Vds 350V
	Package Type SOT-23
	Series DN3135
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 35Ω
	Channel Mode Depletion
	Maximum Gate Source Voltage Vgs ±20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.3W
	Forward Voltage Vf 1.8V
	Maximum Operating Temperature 150°C
	Length 3.04mm
	Width 1.4 mm
	Height 1.02mm
	Standards/Approvals Lead (Pb)-free/RoHS
	Automotive Standard No

DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an Advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

High input impedance

Low input capacitance

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

Microchip DN3135 Type N-Channel MOSFET, 135 mA, 350 V Depletion, 3-Pin SOT-23

訂單超過 $1,300.00 免費送貨

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