Nexperia Dual Trench MOSFET 2 Type P-Channel Trench MOSFET, 500 mA, -20 V Enhancement, 8-Pin DFN PMDXB950UPELZ

RS庫存編號:: 152-8344
製造零件編號:: PMDXB950UPELZ
製造商:: Nexperia

Nexperia Dual Trench MOSFET 2 Type P-Channel Trench MOSFET, 500 mA, -20 V Enhancement, 8-Pin DFN PMDXB950UPELZ

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小計（1 包，共 25 件）*

TWD155.00

(不含稅)

TWD162.75

訂單超過 $1,300.00 免費送貨

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單位	每單位	每包*
25 - 1225	TWD6.20	TWD155.00
1250 - 2475	TWD6.00	TWD150.00
2500 +	TWD6.00	TWD150.00

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RS庫存編號:: 152-8344
製造零件編號:: PMDXB950UPELZ
製造商:: Nexperia

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Nexperia
	Channel Type	Type P
	Product Type	Trench MOSFET
	Maximum Continuous Drain Current Id	500mA
	Maximum Drain Source Voltage Vds	-20V
	Series	Trench MOSFET
	Package Type	DFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3.5Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	1.19nC
	Minimum Operating Temperature	150°C
	Maximum Gate Source Voltage Vgs	8 V
	Maximum Power Dissipation Pd	4025mW
	Maximum Operating Temperature	-55°C
	Transistor Configuration	Dual
	Standards/Approvals	No
	Length	1.15mm
	Height	0.36mm
	Width	1.05 mm
	Number of Elements per Chip	2
	Automotive Standard	No

	選取全部
	品牌 Nexperia
	Channel Type Type P
	Product Type Trench MOSFET
	Maximum Continuous Drain Current Id 500mA
	Maximum Drain Source Voltage Vds -20V
	Series Trench MOSFET
	Package Type DFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3.5Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 1.19nC
	Minimum Operating Temperature 150°C
	Maximum Gate Source Voltage Vgs 8 V
	Maximum Power Dissipation Pd 4025mW
	Maximum Operating Temperature -55°C
	Transistor Configuration Dual
	Standards/Approvals No
	Length 1.15mm
	Height 0.36mm
	Width 1.05 mm
	Number of Elements per Chip 2
	Automotive Standard No

P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.

20 V, dual P-channel Trench MOSFET, Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Low leakage current

Trench MOSFET technology

Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm

Exposed drain pad for excellent thermal conduction

ElectroStatic Discharge (ESD) protection > 1 kV HBM

Drain-source on-state resistance RDSon = 1.02 Ω

Relay driver

High-speed line driver

High-side load switch

Switching circuits

Nexperia Dual Trench MOSFET 2 Type P-Channel Trench MOSFET, 500 mA, -20 V Enhancement, 8-Pin DFN PMDXB950UPELZ

訂單超過 $1,300.00 免費送貨

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