Nexperia Type P-Channel MOSFET, -3.2 A, -12 V Enhancement, 4-Pin DFN PMXB65UPEZ

RS庫存編號:: 151-3145
製造零件編號:: PMXB65UPEZ
製造商:: Nexperia

Nexperia Type P-Channel MOSFET, -3.2 A, -12 V Enhancement, 4-Pin DFN PMXB65UPEZ

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 50 件）*

TWD325.00

(不含稅)

TWD341.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

10,000 件從 2026年6月24日起裝運發貨

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單位	每單位	每包*
50 - 1200	TWD6.50	TWD325.00
1250 - 2450	TWD6.30	TWD315.00
2500 +	TWD6.30	TWD315.00

* 參考價格

RS庫存編號:: 151-3145
製造零件編號:: PMXB65UPEZ
製造商:: Nexperia

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Nexperia
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-3.2A
	Maximum Drain Source Voltage Vds	-12V
	Package Type	DFN
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	880mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	8 V
	Typical Gate Charge Qg @ Vgs	6.7nC
	Maximum Power Dissipation Pd	8.33W
	Maximum Operating Temperature	150°C
	Width	1.05 mm
	Length	1.15mm
	Height	0.36mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Nexperia
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id -3.2A
	Maximum Drain Source Voltage Vds -12V
	Package Type DFN
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 880mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 8 V
	Typical Gate Charge Qg @ Vgs 6.7nC
	Maximum Power Dissipation Pd 8.33W
	Maximum Operating Temperature 150°C
	Width 1.05 mm
	Length 1.15mm
	Height 0.36mm
	Standards/Approvals No
	Automotive Standard No

P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.

12 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm

Exposed drain pad for excellent thermal conduction

ElectroStatic Discharge (ESD) protection 1.5 kV HBM

Drain-source on-state resistance RDSon = 59 mΩ

Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V

Nexperia Type P-Channel MOSFET, -3.2 A, -12 V Enhancement, 4-Pin DFN PMXB65UPEZ

訂單超過 $1,300.00 免費送貨

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