Nexperia Type P-Channel MOSFET, -2.4 A, -30 V Enhancement, 4-Pin DFN

RS庫存編號:: 151-3073
製造零件編號:: PMXB120EPEZ
製造商:: Nexperia

Nexperia Type P-Channel MOSFET, -2.4 A, -30 V Enhancement, 4-Pin DFN

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可享批量折扣

小計（1 卷，共 5000 件）*

TWD20,000.00

(不含稅)

TWD21,000.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

10,000 件從 2026年5月27日起裝運發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
5000 - 5000	TWD4.00	TWD20,000.00
10000 +	TWD3.90	TWD19,500.00

* 參考價格

RS庫存編號:: 151-3073
製造零件編號:: PMXB120EPEZ
製造商:: Nexperia

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Nexperia
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-2.4A
	Maximum Drain Source Voltage Vds	-30V
	Package Type	DFN
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	187mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	6.2nC
	Maximum Power Dissipation Pd	8.33W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	1.05 mm
	Length	1.15mm
	Height	0.36mm
	Automotive Standard	No

	選取全部
	品牌 Nexperia
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id -2.4A
	Maximum Drain Source Voltage Vds -30V
	Package Type DFN
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 187mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 6.2nC
	Maximum Power Dissipation Pd 8.33W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 1.05 mm
	Length 1.15mm
	Height 0.36mm
	Automotive Standard No

P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.

30 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm

Exposed drain pad for excellent thermal conduction

ElectroStatic Discharge (ESD) protection 1 kV HBM

Drain-source on-state resistance RDSon = 350 mΩ

Nexperia Type P-Channel MOSFET, -2.4 A, -30 V Enhancement, 4-Pin DFN

訂單超過 $1,300.00 免費送貨

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