Nexperia Type P-Channel MOSFET, -2.9 A, -20 V Enhancement, 4-Pin DFN PMXB75UPEZ
- RS庫存編號:
- 153-1936
- 製造零件編號:
- PMXB75UPEZ
- 製造商:
- Nexperia
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 50 件）*
TWD355.00
(不含稅)
TWD373.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 5,000 件從 2026年5月12日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 50 - 1200 | TWD7.10 | TWD355.00 |
| 1250 - 2450 | TWD7.00 | TWD350.00 |
| 2500 + | TWD6.80 | TWD340.00 |
* 參考價格
- RS庫存編號:
- 153-1936
- 製造零件編號:
- PMXB75UPEZ
- 製造商:
- Nexperia
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -2.9A | |
| Maximum Drain Source Voltage Vds | -20V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 950mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 8.33W | |
| Typical Gate Charge Qg @ Vgs | 6.8nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.05 mm | |
| Length | 1.15mm | |
| Height | 0.36mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -2.9A | ||
Maximum Drain Source Voltage Vds -20V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 950mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 8.33W | ||
Typical Gate Charge Qg @ Vgs 6.8nC | ||
Maximum Operating Temperature 150°C | ||
Width 1.05 mm | ||
Length 1.15mm | ||
Height 0.36mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1.5 kV HBM
Drain-source on-state resistance RDSon = 69 mΩ
Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V
High-side load switch and charging switch for portable devices
Power management in battery driven portables
LED driver
DC-to-DC converter
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