Nexperia Type N-Channel MOSFET, 3.2 A, 30 V Enhancement, 4-Pin DFN PMXB56ENZ

RS庫存編號:: 153-1892
製造零件編號:: PMXB56ENZ
製造商:: Nexperia

Nexperia Type N-Channel MOSFET, 3.2 A, 30 V Enhancement, 4-Pin DFN PMXB56ENZ

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 25 件）*

TWD235.00

(不含稅)

TWD246.75

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年7月31日發貨

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單位	每單位	每包*
25 - 1225	TWD9.40	TWD235.00
1250 - 2475	TWD9.10	TWD227.50
2500 +	TWD9.00	TWD225.00

* 參考價格

RS庫存編號:: 153-1892
製造零件編號:: PMXB56ENZ
製造商:: Nexperia

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Nexperia
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	3.2A
	Maximum Drain Source Voltage Vds	30V
	Package Type	DFN
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	87mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	3.6nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	8.33W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	1.15mm
	Height	0.36mm
	Width	1.05 mm
	Automotive Standard	No

	選取全部
	品牌 Nexperia
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 3.2A
	Maximum Drain Source Voltage Vds 30V
	Package Type DFN
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 87mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 3.6nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 8.33W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 1.15mm
	Height 0.36mm
	Width 1.05 mm
	Automotive Standard No

N-channel MOSFETs 25 V - 30 V, Robust performance thanks to Advanced technology know-how, Easy-to-use MOSFETs in the 25 V to 30 V range. Perfect for space- and power-critical applications, they offer excellent switching performance and class-leading safe operating area (SOA). Need a different voltage rating? Check out the rest of our huge portfolio for more options.

30 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Leadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mm

Exposed drain pad for excellent thermal conduction

Very low Drain-Source on-state resistance RDSon = 49 mΩ

Very fast switching

Low-side load switch and charging switch for portable devices

Power management in battery-driven portables

LED driver

DC-to-DC converters

Nexperia Type N-Channel MOSFET, 3.2 A, 30 V Enhancement, 4-Pin DFN PMXB56ENZ

訂單超過 $1,300.00 免費送貨

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