Nexperia Dual NX3020NAKS 2 Type N-Channel Trench MOSFET, 180 mA, 30 V Enhancement, 6-Pin TSSOP NX3020NAKS,115
- RS庫存編號:
- 170-5396
- 製造零件編號:
- NX3020NAKS,115
- 製造商:
- Nexperia
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 50 件)*
TWD260.00
(不含稅)
TWD273.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 100 件從 2026年1月12日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 50 - 700 | TWD5.20 | TWD260.00 |
| 750 - 1450 | TWD5.10 | TWD255.00 |
| 1500 + | TWD5.00 | TWD250.00 |
* 參考價格
- RS庫存編號:
- 170-5396
- 製造零件編號:
- NX3020NAKS,115
- 製造商:
- Nexperia
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Channel Type | Type N | |
| Product Type | Trench MOSFET | |
| Maximum Continuous Drain Current Id | 180mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSSOP | |
| Series | NX3020NAKS | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 13Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.1W | |
| Typical Gate Charge Qg @ Vgs | 0.26nC | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | -55°C | |
| Width | 1.35 mm | |
| Length | 2.2mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Channel Type Type N | ||
Product Type Trench MOSFET | ||
Maximum Continuous Drain Current Id 180mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSSOP | ||
Series NX3020NAKS | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 13Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.1W | ||
Typical Gate Charge Qg @ Vgs 0.26nC | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature -55°C | ||
Width 1.35 mm | ||
Length 2.2mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Robust interfacing between asynchronous and synchronous systems. Flip-flops are Basic storage elements in digital electronics. By only allowing the output to change on an edge transition, flip-flops provide a robust Interface between asynchronous and synchronous systems. With a choice of either positive or negative edge triggered options they provide added design flexibility.
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Very fast switching
Trench MOSFET technology
ESD protection
Low threshold voltage
Target applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
相關連結
- Nexperia Dual NX3020NAKS 2 Type N-Channel Trench MOSFET 30 V Enhancement, 6-Pin TSSOP
- Nexperia Dual Trench MOSFET 2 Type N-Channel Trench MOSFET 60 V Enhancement, 8-Pin DFN
- Nexperia Dual Trench MOSFET 2 Type P-Channel Trench MOSFET -20 V Enhancement, 8-Pin DFN
- Nexperia Dual NX3008CBKS 2 Type P 350 mA 6-Pin SC-88 NX3008CBKS,115
- Nexperia Dual Trench MOSFET 2 Type P-Channel Trench MOSFET -20 V Enhancement, 8-Pin DFN PMDXB950UPELZ
- Nexperia Dual Trench MOSFET 2 Type N-Channel Trench MOSFET 60 V Enhancement, 8-Pin DFN NX7002BKXBZ
- Nexperia Dual NX3008CBKS 2 Type P 350 mA 6-Pin SC-88
- Nexperia Isolated Trench MOSFET 2 Type N-Channel MOSFET 30 V Enhancement115
