Nexperia Isolated Trench MOSFET 2 Type N-Channel MOSFET, 870 mA, 20 V Enhancement, 6-Pin SC-88 PMGD280UN,115
- RS庫存編號:
- 725-8329
- 製造零件編號:
- PMGD280UN,115
- 製造商:
- Nexperia
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 20 件）*
TWD112.00
(不含稅)
TWD117.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 300 件從 2026年1月05日 起發貨
- 加上 2,240 件從 2026年1月12日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 740 | TWD5.60 | TWD112.00 |
| 760 - 1480 | TWD5.50 | TWD110.00 |
| 1500 + | TWD5.40 | TWD108.00 |
* 參考價格
- RS庫存編號:
- 725-8329
- 製造零件編號:
- PMGD280UN,115
- 製造商:
- Nexperia
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 870mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | Trench MOSFET | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 340mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 400mW | |
| Typical Gate Charge Qg @ Vgs | 0.89nC | |
| Forward Voltage Vf | 0.83V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Standards/Approvals | No | |
| Length | 2.2mm | |
| Width | 1.35 mm | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 870mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series Trench MOSFET | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 340mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 400mW | ||
Typical Gate Charge Qg @ Vgs 0.89nC | ||
Forward Voltage Vf 0.83V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Standards/Approvals No | ||
Length 2.2mm | ||
Width 1.35 mm | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Dual N-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
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