Nexperia Dual Trench MOSFET 2 N-Channel Trench MOSFET, 260 mA, 60 V Enhancement, 8-Pin DFN NX7002BKXBZ

RS庫存編號:: 153-1880
製造零件編號:: NX7002BKXBZ
製造商:: Nexperia

Nexperia Dual Trench MOSFET 2 N-Channel Trench MOSFET, 260 mA, 60 V Enhancement, 8-Pin DFN NX7002BKXBZ

此圖片僅供參考，請參閲產品詳細資訊及規格

暫時無法供應

我們無法確定此產品何時有貨，RS 預計將其從我們的產品目錄中移除。

RS庫存編號:: 153-1880
製造零件編號:: NX7002BKXBZ
製造商:: Nexperia

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Nexperia
	Channel Type	N
	Product Type	Trench MOSFET
	Maximum Continuous Drain Current Id	260mA
	Maximum Drain Source Voltage Vds	60V
	Package Type	DFN
	Series	Trench MOSFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	5.7Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	1nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	4032mW
	Maximum Operating Temperature	+150°C
	Transistor Configuration	Dual
	Width	1.05mm
	Length	1.15mm
	Height	360μm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	No

	選取全部
	品牌 Nexperia
	Channel Type N
	Product Type Trench MOSFET
	Maximum Continuous Drain Current Id 260mA
	Maximum Drain Source Voltage Vds 60V
	Package Type DFN
	Series Trench MOSFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 5.7Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 1nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 4032mW
	Maximum Operating Temperature +150°C
	Transistor Configuration Dual
	Width 1.05mm
	Length 1.15mm
	Height 360μm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard No

N-channel MOSFETs 40 V - 60 V, Logic- and Standard Level MOSFETs in a variety of packages, Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range, part of our massive MOSFET device portfolio. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).

60 V, dual N-channel Trench MOSFET, Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic-level compatible

Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits

Nexperia Dual Trench MOSFET 2 N-Channel Trench MOSFET, 260 mA, 60 V Enhancement, 8-Pin DFN NX7002BKXBZ

相關連結

第一時間了解我們的最新產品和優惠