Nexperia Dual Trench MOSFET 2 Type N-Channel Trench MOSFET, 260 mA, 60 V Enhancement, 8-Pin DFN NX7002BKXBZ

RS庫存編號:: 153-1880
製造零件編號:: NX7002BKXBZ
製造商:: Nexperia

Nexperia Dual Trench MOSFET 2 Type N-Channel Trench MOSFET, 260 mA, 60 V Enhancement, 8-Pin DFN NX7002BKXBZ

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小計（1 包，共 50 件）*

TWD325.00

(不含稅)

TWD341.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年7月27日發貨

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單位	每單位	每包*
50 - 1200	TWD6.50	TWD325.00
1250 - 2450	TWD6.30	TWD315.00
2500 +	TWD6.20	TWD310.00

* 參考價格

RS庫存編號:: 153-1880
製造零件編號:: NX7002BKXBZ
製造商:: Nexperia

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Nexperia
	Product Type	Trench MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	260mA
	Maximum Drain Source Voltage Vds	60V
	Series	Trench MOSFET
	Package Type	DFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	5.7Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	4032mW
	Typical Gate Charge Qg @ Vgs	1nC
	Minimum Operating Temperature	150°C
	Maximum Gate Source Voltage Vgs	20 V
	Transistor Configuration	Dual
	Maximum Operating Temperature	-55°C
	Width	1.05 mm
	Length	1.15mm
	Height	0.36mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	No

	選取全部
	品牌 Nexperia
	Product Type Trench MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 260mA
	Maximum Drain Source Voltage Vds 60V
	Series Trench MOSFET
	Package Type DFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 5.7Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 4032mW
	Typical Gate Charge Qg @ Vgs 1nC
	Minimum Operating Temperature 150°C
	Maximum Gate Source Voltage Vgs 20 V
	Transistor Configuration Dual
	Maximum Operating Temperature -55°C
	Width 1.05 mm
	Length 1.15mm
	Height 0.36mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard No

N-channel MOSFETs 40 V - 60 V, Logic- and Standard Level MOSFETs in a variety of packages, Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range, part of our massive MOSFET device portfolio. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).

60 V, dual N-channel Trench MOSFET, Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic-level compatible

Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits

Nexperia Dual Trench MOSFET 2 Type N-Channel Trench MOSFET, 260 mA, 60 V Enhancement, 8-Pin DFN NX7002BKXBZ

訂單超過 $1,300.00 免費送貨

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