ROHM Single RQ3L050GN 1 N-Channel MOSFET, 12 A, 60 V Enhancement, 8-Pin HSMT RQ3L050GNTB
- RS庫存編號:
- 133-3297
- 製造零件編號:
- RQ3L050GNTB
- 製造商:
- ROHM
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- RS庫存編號:
- 133-3297
- 製造零件編號:
- RQ3L050GNTB
- 製造商:
- ROHM
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Transistor Configuration | Single | |
| Series | RQ3L050GN | |
| Number of Elements per Chip | 1 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 12 A | |
| Maximum Drain Source Voltage (Vds) | 60 V | |
| Channel Mode | Enhancement | |
| Pin Count | 8 | |
| Package Type | HSMT | |
| Forward Voltage (Vf) | 1.2 V | |
| Height | 850 μm | |
| Length | 3.3 mm | |
| Maximum Drain Source Resistance (Rds) | 86 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 20 V, -20 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 14.8 W | |
| Mount Type | Surface | |
| Width | 3.1 mm | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Transistor Configuration Single | ||
Series RQ3L050GN | ||
Number of Elements per Chip 1 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 12 A | ||
Maximum Drain Source Voltage (Vds) 60 V | ||
Channel Mode Enhancement | ||
Pin Count 8 | ||
Package Type HSMT | ||
Forward Voltage (Vf) 1.2 V | ||
Height 850 μm | ||
Length 3.3 mm | ||
Maximum Drain Source Resistance (Rds) 86 mΩ | ||
Maximum Gate Source Voltage (Vgs) 20 V, -20 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 14.8 W | ||
Mount Type Surface | ||
Width 3.1 mm | ||
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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