Vishay SiD N channel-Channel MOSFET, 148 A, 100 V Enhancement, 8-Pin PowerPAK SO-8 SiDR510EP

N

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TWD129.00

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TWD135.45

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  • 2027年6月14日 發貨
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RS庫存編號:
735-163
製造零件編號:
SiDR510EP
製造商:
Vishay
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品牌

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

148A

Maximum Drain Source Voltage Vds

100V

Series

SiD

Package Type

PowerPAK SO-8

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0036Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

54nC

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

100V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Length

7mm

Height

2mm

Width

6mm

Automotive Standard

No

COO (Country of Origin):
DE
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications

94A continuous drain current at TA=25°C

54.3nC typical total gate charge for fast switching

-55°C to +175°C extended junction temperature range

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