Vishay SiD N channel-Channel MOSFET, 291 A, 40 V Enhancement, 8-Pin PowerPAK SO-8 SiDR402EP

N
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小計(1 件)*

TWD113.00

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TWD118.65

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1 - 9TWD113.00
10 - 24TWD74.00
25 - 99TWD70.00
100 - 499TWD67.00
500 +TWD64.00

* 參考價格

RS庫存編號:
735-145
製造零件編號:
SiDR402EP
製造商:
Vishay
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品牌

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

291A

Maximum Drain Source Voltage Vds

40V

Package Type

PowerPAK SO-8

Series

SiD

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00088Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

40V

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

10V

Typical Gate Charge Qg @ Vgs

110nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Length

7mm

Width

6mm

Height

2mm

Automotive Standard

No

COO (Country of Origin):
DE
The Vishay N-Channel MOSFET rated for 40V drain-source voltage, engineered for high-efficiency synchronous rectification in AI power server DC/DC converters. It provides ultra-low on-resistance around 0.88mΩ at 10V gate drive to minimize conduction losses in high-current power stages.

65A continuous drain current at TA=25°C

Low RDS(on) x Qg figure-of-merit for optimal switching

Material categorization qualification for reliability

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