Vishay SQS840CENW N channel-Channel MOSFET, 12 A, 40 V Enhancement, 8-Pin PowerPAK 1212-8W SQS840CENW-T1_BE3
- RS庫存編號:
- 735-127
- 製造零件編號:
- SQS840CENW-T1_BE3
- 製造商:
- Vishay
N
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| 1 - 24 | TWD26.00 |
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| 100 + | TWD8.00 |
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- RS庫存編號:
- 735-127
- 製造零件編號:
- SQS840CENW-T1_BE3
- 製造商:
- Vishay
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK 1212-8W | |
| Series | SQS840CENW | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.02Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 33W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Width | 3.3mm | |
| Length | 3.3mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK 1212-8W | ||
Series SQS840CENW | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.02Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 33W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Width 3.3mm | ||
Length 3.3mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- DE
The Vishay Power MOSFET offers efficient, high-performance switching functionality tailored for automotive applications, delivering reliable operation under challenging conditions.
TrenchFET technology ensures excellent thermal performance
AEC-Q101 qualified for stringent automotive standards
Low on-resistance supports high current efficiency
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