Vishay Type P-Channel MOSFET, 214 A, 40 V Enhancement, 8-Pin PowerPAK 1212-8W
- RS庫存編號:
- 239-8684
- 製造零件編號:
- SQS405CENW-T1_GE3
- 製造商:
- Vishay
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 卷,共 3000 件)*
TWD27,000.00
(不含稅)
TWD28,350.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 3,000 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD9.00 | TWD27,000.00 |
| 15000 + | TWD8.80 | TWD26,400.00 |
* 參考價格
- RS庫存編號:
- 239-8684
- 製造零件編號:
- SQS405CENW-T1_GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 214A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK 1212-8W | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.02Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 197W | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 125°C | |
| Length | 3.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 214A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK 1212-8W | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.02Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 197W | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 125°C | ||
Length 3.3mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay SQS is automotive P-Channel MOSFET which operates at 40 V and 175 °C temperature. This MOSFET used for high power density.
AEC-Q101 qualified
UIS tested
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