Vishay SQS Type N-Channel MOSFET, 214 A, 40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS140ELNW-T1_GE3
- RS庫存編號:
- 268-8370
- 製造零件編號:
- SQS140ELNW-T1_GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD326.00
(不含稅)
TWD342.30
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 6,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | TWD32.60 | TWD326.00 |
| 50 - 90 | TWD31.90 | TWD319.00 |
| 100 - 240 | TWD25.40 | TWD254.00 |
| 250 + | TWD24.90 | TWD249.00 |
* 參考價格
- RS庫存編號:
- 268-8370
- 製造零件編號:
- SQS140ELNW-T1_GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 214A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK 1212-8SLW | |
| Series | SQS | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0043Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 57nC | |
| Maximum Power Dissipation Pd | 197W | |
| Forward Voltage Vf | 0.82V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 214A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK 1212-8SLW | ||
Series SQS | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0043Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 57nC | ||
Maximum Power Dissipation Pd 197W | ||
Forward Voltage Vf 0.82V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay automotive N channel TrenchFET generation 4 power MOSFET is lead Pb and halogen free device with single configuration MOSFET and It is independent of operating temperature. It has wettable flank terminals.
Low thermal resistance
AEC Q101 qualified
ROHS compliant
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