Vishay SQS Type N-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8W SQS460CENW-T1_GE3
- RS庫存編號:
- 268-8373
- 製造零件編號:
- SQS460CENW-T1_GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD189.00
(不含稅)
TWD198.40
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 2,840 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | TWD18.90 | TWD189.00 |
| 50 - 90 | TWD18.50 | TWD185.00 |
| 100 - 240 | TWD14.80 | TWD148.00 |
| 250 - 990 | TWD14.40 | TWD144.00 |
| 1000 + | TWD14.10 | TWD141.00 |
* 參考價格
- RS庫存編號:
- 268-8373
- 製造零件編號:
- SQS460CENW-T1_GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SQS | |
| Package Type | PowerPAK 1212-8W | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.059Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 27W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Forward Voltage Vf | 0.845V | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SQS | ||
Package Type PowerPAK 1212-8W | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.059Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 27W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Forward Voltage Vf 0.845V | ||
Maximum Operating Temperature 175°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay automotive dual N channel TrenchFET power MOSFET is lead Pb and halogen free device. That is single configuration MOSFET and It is independent of operating temperature.
AEC Q101 qualified
ROHS compliant
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