Vishay SQ4940CEY Dual N-Channel Single MOSFETs, 8 A, 40 V Enhancement, 8-Pin SO-8 SQ4940CEY-T1_GE3
- RS庫存編號:
- 653-183
- 製造零件編號:
- SQ4940CEY-T1_GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 3000 件）*
TWD37,200.00
(不含稅)
TWD39,060.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 3,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 + | TWD12.40 | TWD37,200.00 |
* 參考價格
- RS庫存編號:
- 653-183
- 製造零件編號:
- SQ4940CEY-T1_GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Dual N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8 | |
| Series | SQ4940CEY | |
| Mount Type | Through Hole | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.024Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 4W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 11.2nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Width | 4 mm | |
| Height | 1.75mm | |
| Length | 5mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Dual N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8 | ||
Series SQ4940CEY | ||
Mount Type Through Hole | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.024Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 4W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 11.2nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Width 4 mm | ||
Height 1.75mm | ||
Length 5mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay Automotive-grade Dual N-channel MOSFET designed for high-performance switching applications. It operates at 40 V drain-source voltage and can withstand temperatures up to 175 °C, making it Ideal for demanding environments. This device is built with TrenchFET technology and comes in a Compact SO-8 package.
AEC Q101 qualified
Pb Free
Halogen free
RoHS compliant
相關連結
- Vishay SQ4940CEY Dual N-Channel Single MOSFETs 40 V Enhancement, 8-Pin SO-8
- Vishay SQJ738EP Dual N-Channel Single MOSFETs 40 V Enhancement, 4-Pin PowerPAK SQJ738EP-T1_GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SQJ208EP-T1_GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 SQ4946CEY-T1_GE3
- Vishay SQJ738EP Dual N-Channel Single MOSFETs 40 V Enhancement, 4-Pin PowerPAK
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 40 V Enhancement, 4-Pin SO-8 SQJ912DEP-T1_GE3
- Vishay Dual SQJ264EP 2 Type N-Channel MOSFET 60 V Enhancement, 6-Pin SO-8 SQJ264EP-T1_GE3
- Vishay SQ2310CES Type N-Channel Single MOSFETs 30 V Enhancement, 8-Pin PowerPAK SQ2310CES-T1_GE3