Vishay SQJ738EP Dual N-Channel Single MOSFETs, 123 A, 40 V Enhancement, 4-Pin PowerPAK SQJ738EP-T1_GE3

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TWD119,100.00

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TWD125,040.00

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RS庫存編號:
653-066
製造零件編號:
SQJ738EP-T1_GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Dual N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

123A

Maximum Drain Source Voltage Vds

40V

Series

SQJ738EP

Package Type

PowerPAK

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.00317Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

93W

Typical Gate Charge Qg @ Vgs

56nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

175°C

Standards/Approvals

AEC-Q101

Width

5.09 mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The Vishay automotive-grade dual N-channel MOSFET designed for high-efficiency switching in demanding environments. It supports up to 40 V drain-source voltage and operates reliably at junction temperatures up to 175 °C. Packaged in PowerPAK SO-8L, it utilizes TrenchFET Gen IV technology for enhanced thermal and electrical performance.

AEC Q101 qualified

Pb Free

Halogen free

RoHS compliant

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