Vishay SQJ738EP Dual N-Channel Single MOSFETs, 123 A, 40 V Enhancement, 4-Pin PowerPAK
- RS庫存編號:
- 653-067
- 製造零件編號:
- SQJ738EP-T1_GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 組，共 1 件）*
TWD55.00
(不含稅)
TWD57.75
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 3,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
膠帶 | 每膠帶 |
|---|---|
| 1 - 9 | TWD55.00 |
| 10 - 24 | TWD53.00 |
| 25 - 99 | TWD52.00 |
| 100 - 499 | TWD44.00 |
| 500 + | TWD42.00 |
* 參考價格
- RS庫存編號:
- 653-067
- 製造零件編號:
- SQJ738EP-T1_GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Dual N | |
| Maximum Continuous Drain Current Id | 123A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK | |
| Series | SQJ738EP | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.00317Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 93W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.09 mm | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Dual N | ||
Maximum Continuous Drain Current Id 123A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK | ||
Series SQJ738EP | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.00317Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 93W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 5.09 mm | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay automotive-grade dual N-channel MOSFET designed for high-efficiency switching in demanding environments. It supports up to 40 V drain-source voltage and operates reliably at junction temperatures up to 175 °C. Packaged in PowerPAK SO-8L, it utilizes TrenchFET Gen IV technology for enhanced thermal and electrical performance.
AEC Q101 qualified
Pb Free
Halogen free
RoHS compliant
相關連結
- Vishay SQJ738EP Dual N-Channel Single MOSFETs 40 V Enhancement, 4-Pin PowerPAK SQJ738EP-T1_GE3
- Vishay SQ2310CES Type N-Channel Single MOSFETs 30 V Enhancement, 8-Pin PowerPAK
- Vishay SQJQ14 Type N-Channel Single MOSFETs 40 V Enhancement, 3-Pin PowerPAK
- Vishay SQS178EL Type N-Channel Single MOSFETs 72 V Enhancement, 8-Pin PowerPAK
- Vishay SQJ190 Type N-Channel Single MOSFETs 100 V Enhancement, 4-Pin PowerPAK
- Vishay SQJQ140ER Type N-Channel Single MOSFETs 40 V Enhancement, 4-Pin PowerPAK
- Vishay SQS174ELNW Type N-Channel Single MOSFETs 72 V Enhancement, 8-Pin PowerPAK
- Vishay SQS146 Type N-Channel Single MOSFETs 40 V Enhancement, 8-Pin PowerPAK