Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 60 A, 40 V Enhancement, 8-Pin SO-8 SQJ208EP-T1_GE3
- RS庫存編號:
- 188-5101
- 製造零件編號:
- SQJ208EP-T1_GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD334.00
(不含稅)
TWD350.70
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年8月20日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 740 | TWD33.40 | TWD334.00 |
| 750 - 1490 | TWD32.60 | TWD326.00 |
| 1500 + | TWD32.20 | TWD322.00 |
* 參考價格
- RS庫存編號:
- 188-5101
- 製造零件編號:
- SQJ208EP-T1_GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.77V | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Power Dissipation Pd | 48W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Width | 4.47 mm | |
| Height | 1.01mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.77V | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Power Dissipation Pd 48W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 5mm | ||
Width 4.47 mm | ||
Height 1.01mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFETs.
TrenchFET® power MOSFET
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