Vishay Siliconix Dual TrenchFET 2 Type N, Type P-Channel MOSFET, 30 A, 40 V Enhancement, 8-Pin SO-8 SQJ504EP-T1_GE3
- RS庫存編號:
- 178-3893
- 製造零件編號:
- SQJ504EP-T1_GE3
- 製造商:
- Vishay Siliconix
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD385.00
(不含稅)
TWD404.20
(含稅)
訂單超過 $1,300.00 免費送貨
供應短缺
- 30 件準備從其他地點送貨
- 加上 1,410 件從 2026年1月07日 起發貨
我們目前的可售庫存有限，並且我們的供應商預計會出現供應短缺的狀況。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 740 | TWD38.50 | TWD385.00 |
| 750 - 1490 | TWD37.50 | TWD375.00 |
| 1500 + | TWD37.00 | TWD370.00 |
* 參考價格
- RS庫存編號:
- 178-3893
- 製造零件編號:
- SQJ504EP-T1_GE3
- 製造商:
- Vishay Siliconix
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay Siliconix | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 12.1nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 34W | |
| Forward Voltage Vf | 1.2V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Width | 5 mm | |
| Height | 1.07mm | |
| Standards/Approvals | No | |
| Length | 5.99mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay Siliconix | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 12.1nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 34W | ||
Forward Voltage Vf 1.2V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Width 5 mm | ||
Height 1.07mm | ||
Standards/Approvals No | ||
Length 5.99mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
豁免
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount dual channel (both N and P-channels) MOSFET is a new age product with a drain-source voltage of 40V. It has drain-source resistance of 17mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 34W and a continuous drain current of 30A. The MOSFET has been optimized, for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality. It is applicable in the automotive industry.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
Certifications
• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
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