Vishay Siliconix SQJ872EP Type N-Channel MOSFET, 24.5 A, 150 V Enhancement, 8-Pin SO-8L SQJ872EP-T1_GE3
- RS庫存編號:
- 178-3903
- 製造零件編號:
- SQJ872EP-T1_GE3
- 製造商:
- Vishay Siliconix
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可享批量折扣
查看批量定價選項小計（1 包，共 10 件）*
TWD464.00
(不含稅)
TWD487.20
(含稅)
訂單超過 $1,300.00 免費送貨
供應短缺
- 加上 2,920 件從 2026年8月10日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 740 | TWD46.40 | TWD464.00 |
| 750 - 1490 | TWD45.30 | TWD453.00 |
| 1500 + | TWD44.40 | TWD444.00 |
* 參考價格
- RS庫存編號:
- 178-3903
- 製造零件編號:
- SQJ872EP-T1_GE3
- 製造商:
- Vishay Siliconix
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay Siliconix | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24.5A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | SQJ872EP | |
| Package Type | SO-8L | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0395Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 55W | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 5mm | |
| Standards/Approvals | RoHS | |
| Length | 5.99mm | |
| Height | 1.07mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay Siliconix | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24.5A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series SQJ872EP | ||
Package Type SO-8L | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0395Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 55W | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 5mm | ||
Standards/Approvals RoHS | ||
Length 5.99mm | ||
Height 1.07mm | ||
Automotive Standard AEC-Q101 | ||
豁免
- COO (Country of Origin):
- CN
Vishay SQJ872EP Series MOSFET, 150V Drain Source Voltage, 24.5A Continuous Drain Current - SQJ872EP-T1_GE3
This MOSFET is a power switching device designed for high-voltage, high-current applications in demanding environments. It functions as an N‑channel enhancement transistor for switching and power conversion roles. The device is suitable for PCB mounting in a small-outline package and is manufactured to meet industry environmental standards.
Features and Benefits:
• Low on-resistance 0.0395Ω delivering reduced conduction losses
• High voltage capability 150V enabling robust switching headroom
• Continuous current rating 24.5A supporting substantial load currents
• Gate charge 14nC enabling efficient switching control
• Power dissipation 55W allowing sustained thermal load handling
• Wide gate tolerance ±20V making gate drive design flexible
• High voltage capability 150V enabling robust switching headroom
• Continuous current rating 24.5A supporting substantial load currents
• Gate charge 14nC enabling efficient switching control
• Power dissipation 55W allowing sustained thermal load handling
• Wide gate tolerance ±20V making gate drive design flexible
Applications
• Suitable for automotive power stages requiring AEC‑Q101 compliance
• Ideal for industrial motor drive switch arrays
• Used with DC-DC converters in high-voltage systems
• Can be used for synchronous rectification in power supplies
• Useful in inverter and UPS front-end switching stages
• Ideal for industrial motor drive switch arrays
• Used with DC-DC converters in high-voltage systems
• Can be used for synchronous rectification in power supplies
• Useful in inverter and UPS front-end switching stages
What temperature range can it tolerate in harsh installations?
It operates across an extended span from -55°C up to 175°C, supporting extreme industrial and automotive thermal conditions.
What package and mounting approach does it use for board assembly?
The device is supplied in an SO‑8L package designed for PCB mounting to simplify integration into compact assemblies.
How does its forward voltage impact system design?
The forward conduction drop is 1.2V under specified conditions, which should be included in power-loss calculations and thermal‑management assessments.
Is the device suitable for regulated manufacturing and environmental requirements?
It meets RoHS directives, indicating restriction of specified hazardous substances in the component materials.
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