Vishay SIS4406DN Type N-Channel Single MOSFETs, 62.8 A, 40 V Enhancement, 8-Pin PowerPAK SIS4406DN-T1-GE3
- RS庫存編號:
- 653-146
- 製造零件編號:
- SIS4406DN-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 3000 件）*
TWD41,100.00
(不含稅)
TWD43,140.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 3,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 + | TWD13.70 | TWD41,100.00 |
* 參考價格
- RS庫存編號:
- 653-146
- 製造零件編號:
- SIS4406DN-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 62.8A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SIS4406DN | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00475Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23.7nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 33.7W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.41mm | |
| Length | 3.30mm | |
| Standards/Approvals | No | |
| Width | 3.30 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 62.8A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SIS4406DN | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00475Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23.7nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 33.7W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 0.41mm | ||
Length 3.30mm | ||
Standards/Approvals No | ||
Width 3.30 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 40 V drain-source voltage. Packaged in PowerPAK 1212-8, it utilizes TrenchFET Gen IV technology to deliver low gate charge (Qg), reduced output charge (Qoss), and optimized switching performance.
Pb Free
Halogen free
RoHS compliant
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