Vishay SIJ4406DP Type N-Channel Single MOSFETs, 78 A, 40 V Enhancement, 4-Pin PowerPAK SIJ4406DP-T1-GE3
- RS庫存編號:
- 653-105
- 製造零件編號:
- SIJ4406DP-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 3000 件）*
TWD48,900.00
(不含稅)
TWD51,360.00
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 + | TWD16.30 | TWD48,900.00 |
* 參考價格
- RS庫存編號:
- 653-105
- 製造零件編號:
- SIJ4406DP-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 78A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SIJ4406DP | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.00475Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 41.6W | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 10.9nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.25mm | |
| Width | 5.25 mm | |
| Standards/Approvals | No | |
| Height | 1.14mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 78A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SIJ4406DP | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.00475Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 41.6W | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 10.9nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 6.25mm | ||
Width 5.25 mm | ||
Standards/Approvals No | ||
Height 1.14mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 40 V drain-source voltage. Packaged in PowerPAK SO-8L, it utilizes TrenchFET Gen IV technology to deliver very low gate charge (Qg), reduced output charge (Qoss), and excellent switching efficiency.
Pb Free
Halogen free
RoHS compliant
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