Microchip Two Pairs of N and P Channel TC8220 1 P-Channel, N channel-Channel MOSFET Arrays, 2.3 A, 200 V Enhancement,

RS庫存編號:: 598-776
製造零件編號:: TC8220K6-G
製造商:: Microchip

Microchip Two Pairs of N and P Channel TC8220 1 P-Channel, N channel-Channel MOSFET Arrays, 2.3 A, 200 V Enhancement,

小計（1 卷，共 3300 件）*

TWD282,150.00

(不含稅)

TWD296,274.00

訂單超過 $1,300.00 免費送貨

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從 2026年3月30日發貨

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單位	每單位	每卷*
3300 +	TWD85.50	TWD282,150.00

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RS庫存編號:: 598-776
製造零件編號:: TC8220K6-G
製造商:: Microchip

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透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Microchip
	Channel Type	P-Channel, N channel
	Product Type	MOSFET Arrays
	Maximum Continuous Drain Current Id	2.3A
	Maximum Drain Source Voltage Vds	200V
	Package Type	DFN
	Series	TC8220
	Mount Type	Surface
	Pin Count	12
	Maximum Drain Source Resistance Rds	8.5Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±25 V
	Transistor Configuration	Two Pairs of N and P Channel
	Maximum Operating Temperature	150°C
	Length	4mm
	Height	1mm
	Standards/Approvals	RoHS Certificate of Compliance
	Width	4 mm
	Number of Elements per Chip	1
	Automotive Standard	No

	選取全部
	品牌 Microchip
	Channel Type P-Channel, N channel
	Product Type MOSFET Arrays
	Maximum Continuous Drain Current Id 2.3A
	Maximum Drain Source Voltage Vds 200V
	Package Type DFN
	Series TC8220
	Mount Type Surface
	Pin Count 12
	Maximum Drain Source Resistance Rds 8.5Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±25 V
	Transistor Configuration Two Pairs of N and P Channel
	Maximum Operating Temperature 150°C
	Length 4mm
	Height 1mm
	Standards/Approvals RoHS Certificate of Compliance
	Width 4 mm
	Number of Elements per Chip 1
	Automotive Standard No

Datasheet - TC8220K6-G

COO (Country of Origin):: CN

The Microchip High-voltage, low-threshold N-channel and P-channel MOSFETs in a 12-lead DFN package feature integrated gate-to-source resistors and gate-to-source Zener diode clamps, ideal for high-voltage pulser applications. These complementary, high-speed, high-voltage, gate-clamped N-channel and P-channel MOSFET pairs utilize an advanced vertical DMOS structure along with Supertex’s proven silicon-gate manufacturing process. This combination offers the power handling capabilities of bipolar transistors, while also providing the high input impedance and positive temperature coefficient typical of MOS devices.

Integrated gate to source resistor

Integrated gate to source Zener diode

Low threshold, low on-resistance

Low input and output capacitance

Fast switching speeds

Microchip Two Pairs of N and P Channel TC8220 1 P-Channel, N channel-Channel MOSFET Arrays, 2.3 A, 200 V Enhancement,

訂單超過 $1,300.00 免費送貨

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