Microchip TC1550 1 P-Channel, N channel-Channel MOSFET Arrays, 350 mA, 500 V Enhancement, 8-Pin 8-Lead SOIC (TG)
- RS庫存編號:
- 598-873
- 製造零件編號:
- TC1550TG-G
- 製造商:
- Microchip
小計（1 卷，共 3300 件）*
TWD844,470.00
(不含稅)
TWD886,710.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年3月31日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3300 + | TWD255.90 | TWD844,470.00 |
* 參考價格
- RS庫存編號:
- 598-873
- 製造零件編號:
- TC1550TG-G
- 製造商:
- Microchip
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Product Type | MOSFET Arrays | |
| Channel Type | P-Channel, N channel | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | 8-Lead SOIC (TG) | |
| Series | TC1550 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 125Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.90mm | |
| Width | 3.9 mm | |
| Standards/Approvals | RoHS Certificate of Compliance | |
| Height | 1.75mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Product Type MOSFET Arrays | ||
Channel Type P-Channel, N channel | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type 8-Lead SOIC (TG) | ||
Series TC1550 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 125Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Length 4.90mm | ||
Width 3.9 mm | ||
Standards/Approvals RoHS Certificate of Compliance | ||
Height 1.75mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The Microchip High voltage N-channel and P-channel MOSFET in an 8-lead SOIC package is an enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure and Supertex’s proven silicon-gate manufacturing process. This combination offers the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient typical of MOS devices. As with all MOS structures, this device is immune to thermal runaway and thermally induced secondary breakdown, ensuring reliable performance.
Low input capacitance
Fast switching speeds
Free from secondary breakdowns
Low input and output leakage
相關連結
- Microchip Complementary Pair TC6320 1 P-Channel 2 A 8-Pin VDFN
- Microchip Independent N Channel and P Channel Mosfet TC2320 1 P-Channel 2.1 A
- Microchip Dual N Channel TD9944 1 Dual N-Channel MOSFET Arrays 240 V Enhancement, 8-Pin SOIC TD9944TG-G
- Microchip Electrically Isolated N Channel and P Channel Pairs (2 Pairs) TC7920 1 N channel 1.8
- ROHM HT8KE6 2 Type N-Channel MOSFET Arrays 100 V Enhancement, 8-Pin HSMT-8 HT8KE6HTB1
- Infineon Dual HEXFET 1 Type N-Channel MOSFET Arrays 30 V Enhancement, 8-Pin SO-8
- Microchip Two Pairs of N and P Channel TC8220 1 P-Channel 2.3 A
- Infineon Dual HEXFET 1 Type N-Channel MOSFET Arrays 30 V Enhancement, 8-Pin SO-8 IRF7831TRPBF