Starpower DOSEMI Single Switch-Channel SiC Mosfet without Diode, 64 A, 1200 V N, 4-Pin Tape & Reel DM400S12TDRB
- RS庫存編號:
- 427-757
- 製造零件編號:
- DM400S12TDRB
- 製造商:
- Starpower
可享批量折扣
小計（1 件）*
TWD418.00
(不含稅)
TWD438.90
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 20 件準備從其他地點送貨
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單位 | 每單位 |
|---|---|
| 1 - 9 | TWD418.00 |
| 10 - 99 | TWD376.00 |
| 100 - 499 | TWD347.00 |
| 500 - 999 | TWD322.00 |
| 1000 + | TWD261.00 |
* 參考價格
- RS庫存編號:
- 427-757
- 製造零件編號:
- DM400S12TDRB
- 製造商:
- Starpower
規格
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Starpower | |
| Channel Type | Single Switch | |
| Product Type | SiC Mosfet without Diode | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | DOSEMI | |
| Package Type | Tape & Reel | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 55.2mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Forward Voltage Vf | 3.85V | |
| Typical Gate Charge Qg @ Vgs | 86.6nC | |
| Maximum Power Dissipation Pd | 268W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Starpower | ||
Channel Type Single Switch | ||
Product Type SiC Mosfet without Diode | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series DOSEMI | ||
Package Type Tape & Reel | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 55.2mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Forward Voltage Vf 3.85V | ||
Typical Gate Charge Qg @ Vgs 86.6nC | ||
Maximum Power Dissipation Pd 268W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Starpower MOSFET Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as hybrid and electric vehicle.
SiC power MOSFET
Low RDS(on)
Low inductance case avoid oscillations
ROHS
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