Starpower DOSEMI Single Switch-Channel SiC Mosfet without Diode, 118 A, 1200 V N, 4-Pin Tape & Reel DM170S12TDRB

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RS庫存編號:
427-760
製造零件編號:
DM170S12TDRB
製造商:
Starpower
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品牌

Starpower

Product Type

SiC Mosfet without Diode

Channel Type

Single Switch

Maximum Continuous Drain Current Id

118A

Maximum Drain Source Voltage Vds

1200V

Package Type

Tape & Reel

Series

DOSEMI

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

29.0mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

19 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

355W

Forward Voltage Vf

3.6V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

COO (Country of Origin):
CN
The Starpower MOSFET Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as hybrid and electric vehicle.

SiC power MOSFET

Low RDS(on)

Chip sintering technology

Low inductance case avoid oscillations

ROHS

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