Starpower DOSEMI Single Switch-Channel SiC Mosfet without Diode, 37 A, 1200 V N, 4-Pin Tape & Reel DM800S12TDRB
- RS庫存編號:
- 427-759
- 製造零件編號:
- DM800S12TDRB
- 製造商:
- Starpower
可享批量折扣
小計（1 件）*
TWD265.00
(不含稅)
TWD278.25
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 40 件準備從其他地點送貨
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單位 | 每單位 |
|---|---|
| 1 - 9 | TWD265.00 |
| 10 - 99 | TWD238.00 |
| 100 - 499 | TWD219.00 |
| 500 - 999 | TWD204.00 |
| 1000 + | TWD166.00 |
* 參考價格
- RS庫存編號:
- 427-759
- 製造零件編號:
- DM800S12TDRB
- 製造商:
- Starpower
規格
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Starpower | |
| Channel Type | Single Switch | |
| Product Type | SiC Mosfet without Diode | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Tape & Reel | |
| Series | DOSEMI | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 105mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Power Dissipation Pd | 162W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Starpower | ||
Channel Type Single Switch | ||
Product Type SiC Mosfet without Diode | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Tape & Reel | ||
Series DOSEMI | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 105mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Power Dissipation Pd 162W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Starpower MOSFET Power Discrete provides ultralow conduction loss as well as low switching loss. They are designed for the applications such as hybrid and electric vehicle.
SiC power MOSFET
Low RDS(on)
Low inductance case avoid oscillations
ROHS
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