STMicroelectronics Type N-Channel MOSFET, 7 A, 1200 V Enhancement, 3-Pin Tape & Reel
- RS庫存編號:
- 261-5046
- 製造零件編號:
- STH12N120K5-2AG
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 1000 件）*
TWD329,300.00
(不含稅)
TWD345,760.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年1月20日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 1000 | TWD329.30 | TWD329,300.00 |
| 2000 + | TWD319.40 | TWD319,400.00 |
* 參考價格
- RS庫存編號:
- 261-5046
- 製造零件編號:
- STH12N120K5-2AG
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Tape & Reel | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.9Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.8mm | |
| Width | 10.4 mm | |
| Height | 4.7mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Tape & Reel | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.9Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 15.8mm | ||
Width 10.4 mm | ||
Height 4.7mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics high voltage N-channel power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
AEC-Q101 qualified
Industry’s lowest RDS(on) x area
Industry’s best FoM (figure of merit)
Ultra-low gate charge
100% avalanche tested
相關連結
- STMicroelectronics Type N-Channel MOSFET 1200 V Enhancement, 3-Pin Tape & Reel STH12N120K5-2AG
- STMicroelectronics Type N-Channel MOSFET 650 V Enhancement, 7-Pin Tape & Reel
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 7-Pin Tape & Reel
- STMicroelectronics Type N-Channel MOSFET 650 V Enhancement, 7-Pin Tape & Reel SCT055HU65G3AG
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 7-Pin Tape & Reel SCT040HU65G3AG
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement Tape & Reel STD80N450K6
- STMicroelectronics STB37N60 Type N-Channel MOSFET 1200 V Enhancement, 3-Pin H2PAK
- STMicroelectronics STB37N60 Type N-Channel MOSFET 1200 V Enhancement, 3-Pin H2PAK STH12N120K5-2