製造零件編號

STMicroelectronics Type N-Channel MOSFET, 30 A, 650 V Enhancement, 7-Pin Tape & Reel

RS庫存編號:: 261-5041
製造零件編號:: SCT055HU65G3AG
製造商:: STMicroelectronics

STMicroelectronics Type N-Channel MOSFET, 30 A, 650 V Enhancement, 7-Pin Tape & Reel

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 600 件）*

TWD253,200.00

(不含稅)

TWD265,860.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2027年1月08日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
600 - 600	TWD422.00	TWD253,200.00
1200 +	TWD409.40	TWD245,640.00

* 參考價格

RS庫存編號:: 261-5041
製造零件編號:: SCT055HU65G3AG
製造商:: STMicroelectronics

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	STMicroelectronics
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	650V
	Package Type	Tape & Reel
	Mount Type	Surface
	Pin Count	7
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	29nC
	Maximum Gate Source Voltage Vgs	22 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	18.58mm
	Width	14 mm
	Standards/Approvals	No
	Height	3.5mm
	Automotive Standard	No

	選取全部
	品牌 STMicroelectronics
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 650V
	Package Type Tape & Reel
	Mount Type Surface
	Pin Count 7
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 29nC
	Maximum Gate Source Voltage Vgs 22 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 18.58mm
	Width 14 mm
	Standards/Approvals No
	Height 3.5mm
	Automotive Standard No

Datasheet - SCT055HU65G3AG

COO (Country of Origin):: MA

Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HU3PAK package

The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

AEC-Q101 qualified

Very low RDS(on) over the entire temperature range

High speed switching performances

Very fast and robust intrinsic body diode

Source sensing pin for increased efficiency

STMicroelectronics Type N-Channel MOSFET, 30 A, 650 V Enhancement, 7-Pin Tape & Reel

訂單超過 $1,300.00 免費送貨

Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HU3PAK package

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