Infineon IGC033 Type P-Channel MOSFET, 76 A, 100 V Enhancement, 6-Pin PG-VSON-6 IGC033S10S1XTMA1

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RS庫存編號:
351-971
製造零件編號:
IGC033S10S1XTMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

76A

Maximum Drain Source Voltage Vds

100V

Package Type

PG-VSON-6

Series

IGC033

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

3.3mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

11nC

Maximum Power Dissipation Pd

45W

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC

Automotive Standard

No

COO (Country of Origin):
MY

Infineon IGC033 Series MOSFET, 100V Drain Source Voltage, 76A Continuous Drain Current - IGC033S10S1XTMA1


This MOSFET is a P-channel enhancement device designed for high-current switching in surface-mounted electronics. It operates across a wide temperature range and is suited to demanding thermal environments while providing low-resistance conduction for power management and conversion tasks.

Features and Benefits:


• 3.3mΩ drain-source resistance for minimal conduction loss
• 76A continuous drain current enabling heavy-load switching
• 100V drain-source rating for high-voltage applications
• 11nC typical gate charge for faster switching transitions
• 45W maximum power dissipation supporting elevated loads
• 5.5V maximum gate-source tolerance for low-voltage drive compatibility

Applications


• Suitable for synchronous buck converters in power supplies
• Ideal for motor driver stages requiring high current
• Used for high-voltage load switching in industrial systems
• Can be used for server and telecoms power distribution
• Appropriate for compact surface-mount power modules

What package type should I plan for on my board?


It is supplied in a PG-VSON-6 surface-mount package requiring a six-pin footprint and thermal pad considerations to dissipate heat.

How does temperature range affect deployment choices?


With an operating range from -40 to 150°C it can be placed in environments with wide thermal variation, though layout must ensure sufficient thermal conduction to stay within dissipation limits.

What gate-drive levels are acceptable for switching?


Drive voltages must not exceed 5.5V between gate and source

typical low-voltage gate-drive circuits are appropriate given the modest gate charge.

Are there specific considerations for power dissipation management?


The 45W maximum requires adequate copper area or heatsinking on the PCB and consideration of duty cycle to prevent junction overheating.

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