Infineon IGC033 Type P-Channel MOSFET, 76 A, 100 V Enhancement, 6-Pin PG-VSON-6 IGC033S101XTMA1
- RS庫存編號:
- 351-970
- 製造零件編號:
- IGC033S101XTMA1
- 製造商:
- Infineon
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- RS庫存編號:
- 351-970
- 製造零件編號:
- IGC033S101XTMA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 76A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IGC033 | |
| Package Type | PG-VSON-6 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 3.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 45W | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 76A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IGC033 | ||
Package Type PG-VSON-6 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 3.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 45W | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Infineon IGC033 Series MOSFET, 100V Drain Source Voltage, 76A Continuous Drain Current - IGC033S101XTMA1
This MOSFET is a P‑channel enhancement device intended for power switching in surface‑mounted designs. It operates across a wide thermal span and is JEDEC‑compliant, making it suitable for high‑current applications where compact package integration is required.
Features and Benefits:
• Very low Rds(on) of 3.3mΩ for reduced conduction losses
• Can handle continuous drain current of 76A for heavy loads
• 100V drain‑source rating for high voltage switching
• 45W maximum power dissipation for thermal headroom
• Typical gate charge 11nC enabling efficient gate drive
• Surface mount PG‑VSON‑6 package for space‑efficient layouts
• Can handle continuous drain current of 76A for heavy loads
• 100V drain‑source rating for high voltage switching
• 45W maximum power dissipation for thermal headroom
• Typical gate charge 11nC enabling efficient gate drive
• Surface mount PG‑VSON‑6 package for space‑efficient layouts
Applications
• Suitable for synchronous rectification in power supplies
• Ideal for high‑current DC-DC conversion stages
• Used with motor controllers requiring compact switches
• Can be used for server and telecoms power distribution
• Compatible with battery management systems in industrial equipment
• Ideal for high‑current DC-DC conversion stages
• Used with motor controllers requiring compact switches
• Can be used for server and telecoms power distribution
• Compatible with battery management systems in industrial equipment
What gate drive considerations should I allow for in designs?
The device exhibits a typical gate charge of 11nC, so gate drivers must supply sufficient peak current to achieve the required switching speed while controlling dV/dt to limit EMI.
How does thermal performance affect PCB layout?
With a 45W power dissipation ceiling, thermal vias and a copper heat spread are recommended to manage junction temperature, especially at high continuous currents.
What voltage and polarity constraints apply to the gate?
The maximum gate‑to‑source rating is 5.5V, so gate drive must not exceed this differential to avoid device stress.
Are there environment limits for deployment?
The device is rated to operate from -40°C up to 150°C, so component selection and thermal design should accommodate that range for reliable operation.
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