Infineon CoolSiC Type N-Channel MOSFET, 83 A, 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R020M2HXKSA1
- RS庫存編號:
- 349-335
- 製造零件編號:
- IMZA65R020M2HXKSA1
- 製造商:
- Infineon
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- RS庫存編號:
- 349-335
- 製造零件編號:
- IMZA65R020M2HXKSA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 83A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-TO247-4 | |
| Series | CoolSiC | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 273W | |
| Typical Gate Charge Qg @ Vgs | 57nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 83A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-TO247-4 | ||
Series CoolSiC | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 273W | ||
Typical Gate Charge Qg @ Vgs 57nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon CoolSiC Series MOSFET, 650V Drain Source Voltage, 83A Continuous Drain Current - IMZA65R020M2HXKSA1
This MOSFET is a silicon carbide power transistor designed for high-voltage switching in power-electronics systems. It functions as an N-channel enhancement device for converting and controlling electrical energy where efficiency and thermal endurance are required. The component is supplied in a through-hole PG-TO247-4 package intended for robust mounting and heat dissipation in demanding electronic assemblies.
Features and Benefits:
• 650V blocking capability supports high-voltage designs
• 24mΩ low Rds(on) reduces conduction losses
• 83A continuous drain current enables high-current operation
• 273W power dissipation assists thermal management
• 57nC typical gate charge yields faster switching transitions
• -55°C to175°C rated temperature range extends operating envelope
• 24mΩ low Rds(on) reduces conduction losses
• 83A continuous drain current enables high-current operation
• 273W power dissipation assists thermal management
• 57nC typical gate charge yields faster switching transitions
• -55°C to175°C rated temperature range extends operating envelope
Applications
• Suitable for industrial motor drives and inverters
• Ideal for high-voltage power supplies and converters
• Used with traction or renewable-energy power stages
• Can be used for fast-switching DC-DC conversion
• Appropriate for battery systems requiring high current handling
• Ideal for high-voltage power supplies and converters
• Used with traction or renewable-energy power stages
• Can be used for fast-switching DC-DC conversion
• Appropriate for battery systems requiring high current handling
What gate voltage limits must designers observe?
The device must not be driven beyond a maximum gate-to-source voltage of 23V to avoid gate overstress.
How does the package affect thermal routing on a board?
The PG-TO247-4 through-hole format allows direct heatsink attachment and straightforward thermal pathing through the board for enhanced dissipation.
What switching behaviour can be expected from the gate charge value?
A typical gate charge of 57 nC indicates moderate gate-drive energy requirements, balancing switching speed and drive current needs.
What channel conduction mode applies during operation?
The transistor operates as an enhancement-mode N-channel device, requiring positive gate drive to conduct.
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