Infineon CoolSiC Type N-Channel MOSFET, 38 A, 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R050M2HXKSA1
- RS庫存編號:
- 349-338
- 製造零件編號:
- IMZA65R050M2HXKSA1
- 製造商:
- Infineon
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小計（1 件）*
TWD355.00
(不含稅)
TWD372.75
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 240 件從 2026年1月12日 起發貨
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單位 | 每單位 |
|---|---|
| 1 - 9 | TWD355.00 |
| 10 - 99 | TWD319.00 |
| 100 - 499 | TWD295.00 |
| 500 - 999 | TWD273.00 |
| 1000 + | TWD245.00 |
* 參考價格
- RS庫存編號:
- 349-338
- 製造零件編號:
- IMZA65R050M2HXKSA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolSiC | |
| Package Type | PG-TO247-4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 62mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Power Dissipation Pd | 153W | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolSiC | ||
Package Type PG-TO247-4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 62mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Power Dissipation Pd 153W | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon CoolSiC MOSFET 650 V G2 is built on Infineon’s robust 2nd generation Silicon Carbide trench technology, delivering unparalleled performance, superior reliability, and ease of use. This advanced MOSFET enables cost effective, highly efficient, and simplified designs, addressing the ever growing needs of modern power systems and markets. It offers a powerful solution for achieving superior system efficiency in various applications, ensuring optimal performance in demanding environments.
Ultra low switching losses
Robust against parasitic turn on even with 0 V turn off gate voltage
Flexible driving voltage and compatible with bipolar driving scheme
Robust body diode operation under hard commutation events
The .XT interconnection technology for best in class thermal performance
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