Infineon CoolSiC Type N-Channel MOSFET, 103 A, 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R015M2HXKSA1

This MOSFET is a silicon carbide power transistor designed for high-voltage switching in demanding industrial environments. It operates as an N-channel enhancement device and is supplied in a four-pin PG-TO247-4 through-hole package suited to heat-sinking and conventional assembly methods. The component supports continuous high-current operation and is specified for wide-temperature use, making it appropriate for systems requiring sustained power handling at elevated junction temperatures.

• 650V drain voltage enables high-voltage switching applications
• 103A continuous drain current supports heavy current loads
• 18 mΩ RDS(on) reduces conduction losses for higher efficiency
• 79 nC typical gate charge affords predictable switching behaviour
• 341W maximum power dissipation allows substantial thermal loading
• Rated from -55 °C to 175 °C suits extreme-temperature operation

• Suitable for industrial motor drive power stages
• Ideal for high-voltage power supplies and inverters
• Used with robust heat-sink assemblies in converters
• Can be used for high-current DC-DC conversion systems
• Appropriate for replacement in through-hole power electronics

It comes in a PG-TO247-4 package with through-hole mounting for soldered or bolted heat-sink attachment.

The typical gate charge of 79 nC indicates gate-drive energy and influences chosen driver strength and switching-speed trade-offs.

The device can dissipate up to 341W under specified conditions and is rated to operate up to 175 °C for high-temperature system designs.

It is not specified as meeting automotive standard approvals and should be assessed against automotive qualification needs.