Infineon CoolSiC Type N-Channel MOSFET, 75 A, 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R020M1HXKSA1

可享批量折扣

小計(1 件)*

TWD889.00

(不含稅)

TWD933.45

(含稅)

Add to Basket
選擇或輸入數量
有庫存
  • 加上 240 件從 2025年12月29日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
1 - 9TWD889.00
10 - 99TWD801.00
100 +TWD738.00

* 參考價格

RS庫存編號:
348-940
製造零件編號:
AIMZA75R020M1HXKSA1
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

75A

Maximum Drain Source Voltage Vds

750V

Series

CoolSiC

Package Type

PG-TO247-4

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

23 V

Maximum Power Dissipation Pd

278W

Typical Gate Charge Qg @ Vgs

67nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The Infineon 750 V CoolSiC MOSFET is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgapSiC material characteristics, the 750V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.

Infineon proprietary die attach technology

Driver source pin available

Enhanced robustness and reliability for bus voltages beyond 500 V

Superior efficiency in hard switching

Higher switching frequency in soft switching topologies

Robustness against parasitic turn on for unipolar gate driving

Reduced switching losses through improved gate control

相關連結