Infineon CoolSiC Type N-Channel MOSFET, 23 A, 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R090M1HXKSA1

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  • 2026年7月08日 發貨
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RS庫存編號:
348-946
製造零件編號:
AIMZA75R090M1HXKSA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

750V

Package Type

PG-TO247-4

Series

CoolSiC

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

117mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

113W

Typical Gate Charge Qg @ Vgs

15nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

23 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

COO (Country of Origin):
MY
The Infineon 750 V CoolSiC MOSFET is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgapSiC material characteristics, the 750V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.

Infineon proprietary die attach technology

Driver source pin available

Enhanced robustness and reliability for bus voltages beyond 500 V

Superior efficiency in hard switching

Higher switching frequency in soft switching topologies

Robustness against parasitic turn on for unipolar gate driving

Reduced switching losses through improved gate control

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