Infineon CoolSiC Type N-Channel MOSFET, 34 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14 IMYH200R075M1HXKSA1
- RS庫存編號:
- 349-113
- 製造零件編號:
- IMYH200R075M1HXKSA1
- 製造商:
- Infineon
可享批量折扣
小計（1 件）*
TWD1,361.00
(不含稅)
TWD1,429.05
(含稅)
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單位 | 每單位 |
|---|---|
| 1 - 9 | TWD1,361.00 |
| 10 - 99 | TWD1,224.00 |
| 100 + | TWD1,129.00 |
* 參考價格
- RS庫存編號:
- 349-113
- 製造零件編號:
- IMYH200R075M1HXKSA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 2000V | |
| Package Type | PG-TO-247-4-PLUS-NT14 | |
| Series | CoolSiC | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 106mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 267W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 2000V | ||
Package Type PG-TO-247-4-PLUS-NT14 | ||
Series CoolSiC | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 106mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 267W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC 2000 V SiC Trench MOSFET is a high performance silicon carbide MOSFET featuring .XT interconnection technology for enhanced thermal and electrical performance. With a benchmark gate threshold voltage (VGS(th)) of 4.5 V, it offers reliable and efficient switching, making it ideal for high voltage power applications. This MOSFET delivers superior performance, ensuring excellent efficiency and robust operation even in demanding environments.
Very low switching losses
Robust body diode for hard commutation
RoHS compliant
Halogen free
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