Infineon CoolSiC Type N-Channel MOSFET, 48 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14 IMYH200R050M1HXKSA1
- RS庫存編號:
- 349-111
- 製造零件編號:
- IMYH200R050M1HXKSA1
- 製造商:
- Infineon
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* 參考價格
- RS庫存編號:
- 349-111
- 製造零件編號:
- IMYH200R050M1HXKSA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 2000V | |
| Series | CoolSiC | |
| Package Type | PG-TO-247-4-PLUS-NT14 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 82nC | |
| Maximum Power Dissipation Pd | 348W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 2000V | ||
Series CoolSiC | ||
Package Type PG-TO-247-4-PLUS-NT14 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 82nC | ||
Maximum Power Dissipation Pd 348W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Infineon CoolSiC Series MOSFET, 2000V Maximum Drain Source Voltage, 48A Maximum Continuous Drain Current - IMYH200R050M1HXKSA1
This MOSFET is a silicon-carbide power transistor designed for high-voltage switching in demanding electrical systems. It operates as an N-channel enhancement device intended for through-hole board mounting and is suited to applications requiring high-temperature tolerance and substantial continuous current handling.
Features and Benefits:
• 2000V drain voltage enables high-voltage switching capability
• 48A continuous drain current supports heavy load operation
• 70mΩ Rds(on) minimises conduction losses during switching
• 82nC typical gate charge allows predictable gate-drive design
• 348W maximum power dissipation manages significant thermal loads
• Through-hole PG-TO-247-4-PLUS-NT14 package simplifies heat-sinking
• 48A continuous drain current supports heavy load operation
• 70mΩ Rds(on) minimises conduction losses during switching
• 82nC typical gate charge allows predictable gate-drive design
• 348W maximum power dissipation manages significant thermal loads
• Through-hole PG-TO-247-4-PLUS-NT14 package simplifies heat-sinking
Applications
• Suitable for high-voltage power converters and inverters
• Ideal for industrial motor drive power stages
• Used with high-voltage capacitor charging circuits
• Can be used for DC-DC conversion in utility equipment
• Suitable for laboratory power electronics evaluation boards
• Ideal for industrial motor drive power stages
• Used with high-voltage capacitor charging circuits
• Can be used for DC-DC conversion in utility equipment
• Suitable for laboratory power electronics evaluation boards
What gate-drive limits must I observe for safe operation?
The gate-source voltage must not exceed 20V
design gate drivers to stay within this threshold including transient suppression.
How does it behave under elevated temperatures?
It is rated to function up to 175°C junction temperature
thermal management should account for the specified maximum power dissipation to prevent thermal runaway.
What mounting considerations are required for thermal control?
The four-pin PG-TO-247-4-PLUS-NT14 through-hole package permits robust mechanical fixation and direct interfacing to a heatsink for efficient heat removal.
Are there constraints on ambient operating range?
The device is specified down to -55°C minimum operating temperature, so designs must accommodate this lower bound for cold-start scenarios.
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