Infineon CoolSiC Type N-Channel MOSFET, 26 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14 IMYH200R100M1HXKSA1

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RS庫存編號:
349-114
製造零件編號:
IMYH200R100M1HXKSA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

26A

Maximum Drain Source Voltage Vds

2000V

Package Type

PG-TO-247-4-PLUS-NT14

Series

CoolSiC

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

142mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

55nC

Maximum Power Dissipation Pd

217W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon CoolSiC 2000 V SiC Trench MOSFET is a high performance silicon carbide MOSFET featuring .XT interconnection technology for enhanced thermal and electrical performance. With a benchmark gate threshold voltage (VGS(th)) of 4.5 V, it offers reliable and efficient switching, making it ideal for high voltage power applications. This MOSFET delivers superior performance, ensuring excellent efficiency and robust operation even in demanding environments.

Very low switching losses

Robust body diode for hard commutation

RoHS compliant

Halogen free

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