Infineon CoolSiC 2000 V SiC Trench MOSFET Type N-Channel MOSFET, 89 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14
- RS庫存編號:
- 284-864
- 製造零件編號:
- IMYH200R024M1HXKSA1
- 製造商:
- Infineon
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小計（1 件）*
TWD4,144.00
(不含稅)
TWD4,351.20
(含稅)
訂單超過 $1,300.00 免費送貨
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單位 | 每單位 |
|---|---|
| 1 - 9 | TWD4,144.00 |
| 10 + | TWD3,730.00 |
* 參考價格
- RS庫存編號:
- 284-864
- 製造零件編號:
- IMYH200R024M1HXKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 89A | |
| Maximum Drain Source Voltage Vds | 2000V | |
| Package Type | PG-TO-247-4-PLUS-NT14 | |
| Series | CoolSiC 2000 V SiC Trench MOSFET | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 576W | |
| Typical Gate Charge Qg @ Vgs | 137nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 89A | ||
Maximum Drain Source Voltage Vds 2000V | ||
Package Type PG-TO-247-4-PLUS-NT14 | ||
Series CoolSiC 2000 V SiC Trench MOSFET | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 576W | ||
Typical Gate Charge Qg @ Vgs 137nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC 2000 V SiC Trench MOSFET represents a cutting edge solution designed for high performance applications. Engineered with Advanced .XT interconnection technology, it ensures optimal thermal management and efficiency, making it Ideal for demanding environments. With a robust body diode, the MOSFET excels under hard commutation conditions, providing reliable operation in various applications including string inverters and EV charging systems. Its impressive specifications, including a continuous drain current of up to 89 A, underscore its capability to handle significant power loads, while its low switching losses contribute to overall system efficiency. This device has been rigorously validated for industrial applications, ensuring adherence to industry standards and reliability.
Operates at high voltage of 2000 V
Very low on state resistance for efficiency
Benchmark gate threshold voltage for performance
Robust operation with well designed body diode
Validated for industrial use via JEDEC testing
Supports optimal thermal performance through design
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