Infineon CoolSiC Trench MOSFET Type N-Channel MOSFET, 100 A, 1200 V Enhancement EasyPACK F48MR12W2M1HPB76BPSA1
- RS庫存編號:
- 348-971
- 製造零件編號:
- F48MR12W2M1HPB76BPSA1
- 製造商:
- Infineon
小計(1 件)*
TWD14,782.00
(不含稅)
TWD15,521.10
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 |
|---|---|
| 1 + | TWD14,782.00 |
* 參考價格
- RS庫存編號:
- 348-971
- 製造零件編號:
- F48MR12W2M1HPB76BPSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | EasyPACK | |
| Series | CoolSiC Trench MOSFET | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 17.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 20mW | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 5.35V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60749, IEC 60747, IEC 60068 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type EasyPACK | ||
Series CoolSiC Trench MOSFET | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 17.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 20mW | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 5.35V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60749, IEC 60747, IEC 60068 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Infineon EasyPACK 2B CoolSiC MOSFET Fourpack Module is engineered for high performance power applications, incorporating best-in-class packaging with a compact 12 mm height for efficient space utilization. It features leading edge Wide Bandgap (WBG) material, which enhances power efficiency and thermal performance. With very low module stray inductance, this module minimizes power losses and improves switching speed for more efficient operation.
Outstanding module efficiency
System cost advantages
System efficiency improvement
Reduced cooling requirements
Enabling higher frequency
Increase of power density
相關連結
- Infineon CoolSiC Type N-Channel MOSFET 1200 V Enhancement EasyPACK FS33MR12W1M1HB70BPSA1
- Infineon CoolSiC Trench MOSFET Type N-Channel MOSFET 1200 V Enhancement EasyDUAL FF6MR12W2M1HPB11BPSA1
- Infineon Half Bridge EasyPACK N channel-Channel MOSFET Modules 1200 V Enhancement, 22-Pin EasyPACK
- Infineon Half Bridge EasyPACK N channel-Channel MOSFET Modules 1200 V Enhancement, 22-Pin EasyPACK
- Infineon FS13MR12W2M1H_C55 Type N-Channel MOSFET 1200 V Enhancement EasyPACK FS13MR12W2M1HPB11BPSA1
- Infineon FF11MR12W2M1HP_B11 Type N-Channel MOSFET 1200 V Enhancement EasyPACK FF11MR12W2M1HPB11BPSA1
- Infineon EasyPACK Type N-Channel MOSFET 1200 V Enhancement Tray F3L11MR12W2M1HPB19BPSA1
- Infineon FS13MR12W2M1H_C55 Type N-Channel MOSFET 1200 V Enhancement EasyPACK FS13MR12W2M1HC55BPSA1
