Infineon FF11MR12W2M1HP_B11 Type N-Channel MOSFET, 75 A, 1200 V Enhancement EasyPACK FF11MR12W2M1HPB11BPSA1

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TWD7,181.00

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TWD7,540.05

(含稅)

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RS庫存編號:
348-976
製造零件編號:
FF11MR12W2M1HPB11BPSA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

75A

Maximum Drain Source Voltage Vds

1200V

Package Type

EasyPACK

Series

FF11MR12W2M1HP_B11

Mount Type

Screw

Maximum Drain Source Resistance Rds

23.1mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

23 V

Maximum Power Dissipation Pd

20mW

Forward Voltage Vf

5.35V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 60747, IEC 60068, IEC 60749

Automotive Standard

No

COO (Country of Origin):
DE
The Infineon EasyDUAL 2B CoolSiC MOSFET Half-Bridge Module is engineered for high performance power applications, offering a best-in-class package with a compact 12 mm height. It leverages leading-edge Wide Bandgap (WBG) material, providing enhanced power efficiency and thermal performance. The module is designed with very low stray inductance, which minimizes power losses and improves switching speed.

Outstanding module efficiency

System cost advantages

System efficiency improvement

Reduced cooling requirements

Enabling higher frequency

Increase of power density

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