Infineon F4-11MR12W2M1H_B70 Type N-Channel MOSFET, 75 A, 1200 V Enhancement EasyPACK F411MR12W2M1HB70BPSA1

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RS庫存編號:
349-249
製造零件編號:
F411MR12W2M1HB70BPSA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

75A

Maximum Drain Source Voltage Vds

1200V

Series

F4-11MR12W2M1H_B70

Package Type

EasyPACK

Mount Type

Screw

Maximum Drain Source Resistance Rds

20.1mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

20mW

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

23 V

Forward Voltage Vf

5.35V

Maximum Operating Temperature

150°C

Standards/Approvals

IEC 60068, IEC 60749, IEC 60747

Automotive Standard

No

COO (Country of Origin):
DE
The Infineon EasyPACK 2B CoolSiC MOSFET fourpack module 1200 V, 11 mΩ G1 with NTC, PressFIT contact technology and aluminium nitride ceramic. The MOSFET is designed with best in class packaging featuring a compact 12.25 mm height, optimizing space while maintaining exceptional performance. It incorporates leading edge Wide Bandgap materials, offering superior efficiency and reliability in demanding applications. The module is engineered with very low stray inductance, minimizing power losses and improving overall switching performance.

Outstanding module efficiency

System cost advantages

System efficiency improvement

Reduced cooling requirements

Enabling higher frequency

Increase of power density

Better thermal conductivity of DCB material

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