Infineon F4-17MR12W1M1HP_B76 Type N-Channel MOSFET, 45 A, 1200 V Enhancement EasyPACK F417MR12W1M1HPB76BPSA1

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RS庫存編號:
348-966
製造零件編號:
F417MR12W1M1HPB76BPSA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

1200V

Package Type

EasyPACK

Series

F4-17MR12W1M1HP_B76

Mount Type

Screw

Maximum Drain Source Resistance Rds

34.7mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

20mW

Maximum Gate Source Voltage Vgs

23 V

Forward Voltage Vf

5.35V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 60749, IEC 60068, IEC 60747

Automotive Standard

No

COO (Country of Origin):
DE
The Infineon EasyPACK 1B CoolSiC MOSFET fourpack module 1200 V, 17 mΩ G1 with NTC, pre-applied thermal interface material and PressFIT contact technology. This MOSFET is built with best-in-class packaging, featuring a compact 12 mm height for efficient integration. It utilizes leading edge Wide Bandgap materials, which enhance performance and energy efficiency. The design offers very low module stray inductance, reducing power losses and improving switching characteristics. Powered by the Enhanced CoolSiC MOSFET Gen 1, it provides superior thermal performance and reliability.

Outstanding module efficiency

System cost advantages

System efficiency improvement

Reduced cooling requirements

Enabling higher frequency

Increase of power density

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