Infineon CoolSiC Type N-Channel MOSFET, 25 A, 1200 V Enhancement EasyPACK FS33MR12W1M1HB70BPSA1
- RS庫存編號:
- 348-981
- 製造零件編號:
- FS33MR12W1M1HB70BPSA1
- 製造商:
- Infineon
小計(1 件)*
TWD7,395.00
(不含稅)
TWD7,764.75
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 24 件準備從其他地點送貨
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單位 | 每單位 |
|---|---|
| 1 + | TWD7,395.00 |
* 參考價格
- RS庫存編號:
- 348-981
- 製造零件編號:
- FS33MR12W1M1HB70BPSA1
- 製造商:
- Infineon
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | EasyPACK | |
| Series | CoolSiC | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 60.2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 5.35V | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Power Dissipation Pd | 20mW | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 60068, IEC 60749, IEC 61140, IEC 60747 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type EasyPACK | ||
Series CoolSiC | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 60.2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 5.35V | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Power Dissipation Pd 20mW | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 60068, IEC 60749, IEC 61140, IEC 60747 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Infineon EasyPACK 1B CoolSiC MOSFET Six-Pack Module is engineered for high performance power applications, featuring best-in-class packaging with a compact 12.25 mm height for optimized space efficiency. Built with leading-edge Wide Bandgap (WBG) materials, it offers superior efficiency, thermal performance, and long-term reliability. Powered by Enhanced CoolSiC MOSFET Gen 1, it ensures advanced thermal management and high energy efficiency in demanding environments.
Outstanding module efficiency
System cost advantages
System efficiency improvement
Reduced cooling requirements
Enabling higher frequency
Increase of power density
Better thermal conductivity of DCB material
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